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  • About SCSC

    YearImportant note
    1975Technical cooperation with SIEMENS.
    1980Started silicon single crystal production by FZ method.
    1981Established semiconductor plant. Started production of 1.7" and 2" wafers.
    1984Started production of 2.5" wafers.
    1986Started production of silicon single crystal by CZ method.
    1987Technical cooperation with Japanese companies.
    1988Started production of 3" and 4" wafers.
    1995Established San Chih Semiconductor Co., Ltd. The paid-in capital NT$400,000,000.
    1997Started production of 5" ingots.
    1998Established 8” reclaimed wafer plant in Kuanyin.
    2000Certified as a QS 9000 Company.
    2003Jan. Apply for cash capital increase NT$450,000,000. The paid-in capital after increased became NT$850,000,000.
    Jun. Established subsidiary company Green Energy Technology Inc. which is produce wafers and ingots for solar usage.
    Aug. Apply for cash capital increase NT$250,000,000. The paid-in capital after increased became NT$1,100,000,000.
    Nov. Apply for cash capital increase NT$400,000,000. The paid-in capital after increased became NT$1,500,000,000.
    2004Jan. Apply for cash capital increase NT$400,000,000. The paid-in capital after increased became NT$1,900,000,000.
    Mar. Apply for cash capital increase NT$200,000,000. The paid-in capital after increased became NT$2,100,000,000.
    2005Apr. Apply for cash capital increase NT$150,000,000. The paid-in capital after increased became NT$2,250,000,000.
    2006Mar. 8"reclaimed wafer plant in Kuanyin closed.
    Sep. Apply for capital reduction NT$1,750,000,000. The paid-in capital after reduced became NT$500,000,000
    2007Mar. Awarded by Taiwan Industrial Technology Association "Golden Root Award"
    Jun. Transfer surplus NT$200,000,000 to capital increase. The paid-in capital after increased became NT$700,000,000.
    Sep. Securities and Future Bureau approval public offering
    Oct. Log in Emerging Stock Listing.
    2008Aug. Transfer surplus NT$70,000,000 to capital increase & transfer employee bonus NT$3,000,000 to capital increase.
    The paid-in capital after increased became NT$773,000,000.
    Nov. Taoyuan Tayuan plant opened.
    2009Aug. Transfer surplus NT$77,240,000 to capital increase.
    The paid-in capital after increased became NT$850,240,000.
    2010Oct. LED sapphire crystal growth was officially mass-produced.
    Oct. it issued the first domestic unsecured conversion corporate bonds in 1999.
    2011Shortlisted in 2011 "Taiwan Top 100 Technology".
    Jun. An audit committee was established.
    Dec. The salary committee was established.
    2012Aug. Sapphire Crystal Growth Factory passed ISO9001:2008 certification.
    2013Developed 5" low oxygen concentration silicon wafer.
    4 "Sapphire ingot mass production.
    2014Apr. the "Taiwan Industrial Science and Technology Promotion Association" awarded the Golden Root Award.
    2015Developed 4 "160um ultra-thin wafer.
    2016Developed 6" low oxygen concentration silicon wafer.
    2017Developed 4" lightly polished wafers.
    2018Developed 5" high resistance uniformity silicon wafer.
    2019Jun. the stock listing was terminated.
    2020Mar. The public offering was cancelled.
    May. Capital reduction and capital increase were processed. After capital reduction and capital increase, the capital amount was NT$95,800,000.
    Developed 4" ultra-high resistance silicon wafer.
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