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  • 產品與製程

     Lapped Wafers
    DopantPhosphorous/Boron
    Diametermm76.5100
    Diameter Tolerancemm±0.5±0.5
    Thicknessμm≧190≧190
    Thickness Toleranceμm±10±10
    Total Thickness Variationμm≦3≦3
    Surface Roughness Raμm≦2≦2
    Edge Roundingμmoptionaloptional
    Resistivity RangeOhm-cm 0.003~11~30 >300.008~11~30>30
    Redial Resistivity Variation%2025--- 2025---
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